maximum ratings: (t a =25c) symbol 1n5059 1n5060 1n5061 1N5062 units peak reverse voltage v rrm 200 400 600 800 v dc blocking voltage v r 200 400 600 800 v rms voltage v rms 140 280 420 560 v average forward current(t a =75c) i o 1.0 a peak forward surge current (8.3ms single half sine-wave on rated load) i fsm 50 a operating and storage junction temperature t j ,t stg -65 to +175 c thermal resistance ja 40 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions max units i r v r =rated v rrm 5.0 a i r v r =rated v rrm , t a =175c (1n5059, 1n5060) 300 a i r v r =rated v rrm , t a =175c (1n5061, 1N5062) 200 a v f i f =1.0a 1.2 v c j v r =4.0, f=1.0mhz 15 pf 1n5059 thru 1N5062 glass passivated rectifier 1.0 amp, 200 thru 800 volts gpr-1a case central semiconductor corp. tm r3 (21-june 2005) description: the central semiconductor 1n5059 series types are silicon rectifiers manufactured in a hermetically sealed glass passivated package designed for general purpose applications where high reliability is desired. higher voltage devices are available in the cpr1-010 series. marking codes: full part number
central semiconductor corp. tm gpr-1a case - mechanical outline 1n5059 thru 1N5062 glass passivated rectifier 1.0 amp, 200 thru 800 volts r3 (21-june 2005) marking codes: full part number
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